Determining the resolution of scanning microwave impedance microscopy using atomic-precision buried donor structures [electronic resource].
- Washington, DC : United States. Department of Energy Work for Others Program, 2017. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- pages 1,097-1,102 : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. Department of Energy Work for Others Program, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- To quantify the resolution limits of scanning microwave impedance microscopy (sMIM), we created scanning tunneling microscope (STM)-patterned donor nanostructures in silicon composed of 10 nm lines of highly conductive silicon buried under a protective top cap of silicon, and imaged them with sMIM. Here, this dopant pattern is an ideal test of the resolution and sensitivity of the sMIM technique, as it is made with nm-resolution and offers minimal complications from topography convolution. It has been determined that typical sMIM tips can resolve lines down to ~80 nm spacing, while resolution is independent of tip geometry as extreme tip wear does not change the resolving power, contrary to traditional scanning capacitance microscopy (SCM). Going forward, sMIM is an ideal technique for qualifying buried patterned devices, potentially allowing for quantitative post-fabrication characterization of donor structures, which may be an important tool for the study of atomic-scale transistors and state of the art quantum computation schemes.
- Published through SciTech Connect., 07/04/2017., "sand--2017-6240j", ": S0169433217319165", Applied Surface Science 423 C ISSN 0169-4332 AM, and D. A. Scrymgeour; A. Baca; K. Fishgrab; R. J. Simonson; M. Marshall; E. Bussmann; C. Y. Nakakura; M. Anderson; S. Misra.
- Funding Information:
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