Actions for Strongly Enhanced Photovoltaic Performance and Defect Physics of Air-Stable Bismuth Oxyiodide (BiOI) [electronic resource].

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Strongly Enhanced Photovoltaic Performance and Defect Physics of Air-Stable Bismuth Oxyiodide (BiOI) [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
Article numbers 1,702,176 : digital, PDF file
Additional Creators
National Renewable Energy Laboratory (U.S.), United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Bismuth-based compounds have recently gained increasing attention as potentially nontoxic and defect-tolerant solar absorbers. However, many of the new materials recently investigated show limited photovoltaic performance. Herein, one such compound is explored in detail through theory and experiment: bismuth oxyiodide (BiOI). BiOI thin films are grown by chemical vapor transport and found to maintain the same tetragonal phase in ambient air for at least 197 d. The computations suggest BiOI to be tolerant to antisite and vacancy defects. All-inorganic solar cells (ITO iOI l) with negligible hysteresis and up to 80% external quantum efficiency under select monochromatic excitation are demonstrated. The short-circuit current densities and power conversion efficiencies under AM 1.5G illumination are nearly double those of previously reported BiOI solar cells, as well as other bismuth halide and chalcohalide photovoltaics recently explored by many groups. Through a detailed loss analysis using optical characterization, photoemission spectroscopy, and device modeling, direction for future improvements in efficiency is provided. In conclusion, this work demonstrates that BiOI, previously considered to be a poor photocatalyst, is promising for photovoltaics.
Report Numbers
E 1.99:nrel/ja--5k00-68975
nrel/ja--5k00-68975
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Note
Published through SciTech Connect.
07/17/2017.
"nrel/ja--5k00-68975"
Advanced Materials 29 36 ISSN 0935-9648 AM
Robert L. Z. Hoye; Lana C. Lee; Rachel C. Kurchin; Tahmida N. Huq; Kelvin H. L. Zhang; Melany Sponseller; Lea Nienhaus; Riley E. Brandt; Joel Jean; James Alexander Polizzotti; Ahmed Kursumovic; Moungi G. Bawendi; Vladimir Bulovic; Vladan Stevanovic; Tonio Buonassisi; Judith L. MacManus-Driscoll.
Funding Information
AC36-08GO28308
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