Effectively Transparent Front Contacts for Optoelectronic Devices [electronic resource].

Published:: Washington, D.C. : United States. Dept. of Energy. Office of Energy Efficiency and Renewable Energy, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description:: pages 1,470-1,474 : digital, PDF file
Additional Creators:: Arizona State University, United States. Department of Energy. Office of Energy Efficiency and Renewable Energy, National Science Foundation (U.S.), and United States. Department of Energy. Office of Scientific and Technical Information

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Summary:

Effectively transparent front contacts for optoelectronic devices achieve a measured transparency of up to 99.9% and a measured sheet resistance of 4.8 Ω sq-1. These 3D microscale triangular cross-section grid fingers redirect incoming photons efficiently to the active semiconductor area and can replace standard grid fingers as well as transparent conductive oxide layers in optoelectronic devices. Optoelectronic devices such as light emitting diodes, photodiodes, and solar cells play an important and expanding role in modern technology. Photovoltaics is one of the largest optoelectronic industry sectors and an ever-increasing component of the world's rapidly growing renewable carbon-free electricity generation infrastructure. In recent years, the photovoltaics field has dramatically expanded owing to the large-scale manufacture of inexpensive crystalline Si and thin film cells and modules. The current record efficiency (η = 25.6%) Si solar cell utilizes a heterostructure intrinsic thin layer (HIT) design[1] to enable increased open circuit voltage, while more mass-manufacturable solar cell architectures feature front contacts.[2, 3] Thus improved solar cell front contact designs are important for future large-scale photovoltaics with even higher efficiency.

Report Numbers:

E 1.99:1425154

Subject(s):

Note:

Published through SciTech Connect.
06/10/2016.
Advanced Optical Materials 4 10 ISSN 2195-1071 AM
Rebecca Saive; Aleca M. Borsuk; Hal S. Emmer; Colton R. Bukowsky; John V. Lloyd; Sisir Yalamanchili; Harry A. Atwater.

Funding Information:

EE0006335
EE0004946
EEC-1041895

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