Controlling band alignments by artificial interface dipoles at perovskite heterointerfaces [electronic resource].
- Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2015. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- Article numbers 6,759 : digital, PDF file
- Additional Creators:
- United States. Department of Energy. Office of Basic Energy Sciences and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- The concept ‘the interface is the device' is embodied in a wide variety of interfacial electronic phenomena and associated applications in oxide materials, ranging from catalysts and clean energy systems to emerging multifunctional devices. Many device properties are defined by the band alignment, which is often influenced by interface dipoles. On the other hand, the ability to purposefully create and control interface dipoles is a relatively unexplored degree of freedom for perovskite oxides, which should be particularly effective for such ionic materials. Here we demonstrate tuning the band alignment in perovskite metal-semiconductor heterojunctions over a broad range of 1.7 eV. This is achieved by the insertion of positive or negative charges at the interface, and the resultant dipole formed by the induced screening charge. This approach can be broadly used in applications where decoupling the band alignment from the constituent work functions and electron affinities can enhance device functionality.
- Published through SciTech Connect., 04/07/2015., "slac-pub--16228", "ncomms7759", Nature Communications 6 ISSN 2041-1723 AM, Yajima, Takeaki; Hikita, Yasuyuki; Minohara, Makoto; Bell, Christopher; Mundy, Julia; Kourkoutis, Lena; Muller, David; Kumigashira, Hiroshi; Oshima, Masaharu; Hwang, Harold., and SLAC National Accelerator Lab., Menlo Park, CA (United States)
- Funding Information:
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