Actions for Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors [electronic resource].

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Pulse Thermal Processing for Low Thermal Budget Integration of IGZO Thin Film Transistors [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Energy Efficiency and Renewable Energy, 2014.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
pages 297-301 : digital, PDF file
Additional Creators
Oak Ridge National Laboratory, United States. Department of Energy. Office of Energy Efficiency and Renewable Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Pulse thermal processing (PTP) has been explored for low thermal budget integration of indium gallium zinc oxide (IGZO) thin film transistors (TFTs). The IGZO TFTs are exposed to a broadband (0.2-1.4 m) arc lamp radiation spectrum with 100 pulses of 1 msec pulse width. The impact of radiant exposure power on the TFT performance was analyzed in terms of the switching characteristics and bias stress reliability characteristics, respectively. The PTP treated IGZO TFTs with power density of 3.95 kW/cm2 and 0.1 sec total irradiation time showed comparable switching properties, at significantly lower thermal budget, to furnace annealed IGZO TFT. The typical field effect mobility FE, threshold voltage VT, and sub-threshold gate swing S.S were calculated to be 7.8 cm2/ V s, 8.1 V, and 0.22 V/ decade, respectively. The observed performance shows promise for low thermal budget TFT integration on flexible substrates exploiting the large-area, scalable PTP technology.
Report Numbers
E 1.99:1286774
Subject(s)
Note
Published through SciTech Connect.
11/26/2014.
"BT0400000"
"CEBT105"
IEEE Journal of the Electron Devices Society 3 3 ISSN 2168-6734 AM
Joo Hyon Noh; Pooran C. Joshi; Teja Kuruganti; Philip D. Rack.
Funding Information
AC05-00OR22725
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