Actions for Nanoplasmonic Phenomena at Electronic Boundaries in Graphene [electronic resource].

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Nanoplasmonic Phenomena at Electronic Boundaries in Graphene [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2017.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
pages 2,971-2,977 : digital, PDF file
Additional Creators
Ames Laboratory, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Here, we review recent discoveries of the intriguing plasmonic phenomena at a variety of electronic boundaries (EBs) in graphene including a line of charges in graphene induced by a carbon nanotube gate, grain boundaries in chemical vapor deposited graphene films, an interface between graphene and moiré patterned graphene, an interface between graphene and bilayer graphene, and others. All these and other EBs cause plasmonic impedance mismatch at the two sides of the boundaries. Manifestations of this effect include plasmonic fringes that stem from plasmon reflections and interference. Quantitative analysis and modeling of these plasmonic fringes uncovered intriguing properties and underlying physics of the EBs. Potential plasmonic applications associated with these EBs are also briefly discussed.
Report Numbers
E 1.99:is-j--9551
is-j--9551
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Note
Published through SciTech Connect.
06/30/2017.
"is-j--9551"
ACS Photonics 4 12 ISSN 2330-4022 AM
Zhe Fei; Guang -Xin Ni; Bor -Yuan Jiang; Michael M. Fogler; D. N. Basov.
Funding Information
ARO-DURIP
GBMF4533
FA9550-15-1-0478
N00014-15-1-2671
AC02-07CH11358
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