Export to Refworks Export to EndNote Email
Report an Issue

Oblique patterned etching of vertical silicon sidewalls [electronic resource].

Published:
Washington, D.C. : United States. National Nuclear Security Administration, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description:
Article numbers 142,103 : digital, PDF file
Additional Creators:
Sandia National Laboratories, United States. National Nuclear Security Administration, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online

Availability

I Want It

Finding items...

Restrictions on Access:
Free-to-read Unrestricted online access
Summary:
A method for patterning on vertical silicon surfaces in high aspect ratio silicontopography is presented. A Faraday cage is used to direct energetic reactive ions obliquely through a patterned suspended membrane positioned over the topography. The technique is capable of forming high-fidelity pattern (100 nm) features, adding an additional fabrication capability to standard top-down fabrication approaches.
Report Numbers:
E 1.99:sand--2016-9244j
sand--2016-9244j
Subject(s):
Other Subject(s):
Note:
Published through SciTech Connect.
04/05/2016.
"sand--2016-9244j"
"647514"
Applied Physics Letters 108 14 ISSN 0003-6951; APPLAB AM
D. Bruce Burckel; Patrick S. Finnegan; M. David Henry; Paul J. Resnick; Robert L. Jarecki, Jr.
Funding Information:
AC04-94AL85000
View MARC record | catkey: 24061449