ARPES study of the epitaxially grown topological crystalline insulator SnTe(111) [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy - Physical Description:
- pages 35-40 : digital, PDF file
- Additional Creators:
- Lawrence Berkeley National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- We present that SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular to the (111) surface, demonstrate the projected Dirac cones at the $\overline{Γ}$ and $\overline{M}$ points of the surface Brillouin zone. Additionally, we observe a Dirac-cone-like band structure at the Γ point of the bulk Brillouin zone, whose Dirac energy is largely different from those at the $\overline{Γ}$ and $\overline{M}$ points.
- Report Numbers:
- E 1.99:1436157
- Subject(s):
- Other Subject(s):
- Note:
- Published through SciTech Connect.
10/18/2016.
"ark:/13030/qt5nt8z8fx"
Journal of Electron Spectroscopy and Related Phenomena 219 C ISSN 0368-2048 AM
Yi Zhang; Zhongkai Liu; Bo Zhou; Yeongkwan Kim; Lexian Yang; Hyejin Ryu; Choongyu Hwang; Yulin Chen; Zahid Hussain; Zhi -Xun Shen; Sung -Kwan Mo. - Funding Information:
- AC02-05CH11231
AC02-76SF00515
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