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Quantifying point defects in Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> thin films using resonant x-ray diffraction [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
Article numbers 161,901 : digital, PDF file
Additional Creators
SLAC National Accelerator Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
Cu2ZnSn(S,Se)4 is an interesting, earth abundant photovoltaic material, but has suffered from low open circuit voltage. To better understand the film structure, we have measured resonant x-ray diffraction across the Cu and Zn K-edges for the device quality thin films of Cu2ZnSnS4 (8.6% efficiency) and Cu2ZnSn(S,Se)4 (3.5% efficiency). This approach allows for the confirmation of the underlying kesterite structure and quantification of the concentration of point defects and vacancies on the Cu, Zn, and Sn sublattices. Rietveld refinement of powder diffraction data collected at multiple energies is used to determine that there exists a high level of CuZn and ZnCu defects on the 2c and 2d Wyckoff positions. Furthermore, we observe a significantly lower concentration of ZnSn defects and Cu or Zn vacancies.
Report Numbers
E 1.99:1353056
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Note
Published through SciTech Connect.
10/17/2016.
Applied Physics Letters 109 16 ISSN 0003-6951 AM
Kevin H. Stone; Steven T. Christensen; Steven P. Harvey; Glenn Teeter; Ingrid L. Repins; Michael F. Toney.
Funding Information
AC02-76SF00515
AC36−08GO28308
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