Tuning thermoelectricity in a Bi<sub>2</sub>Se<sub>3</sub> topological insulator via varied film thickness [electronic resource].
- Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2016. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- Article numbers 015,008 : digital, PDF file
- Additional Creators:
- Stanford University. Department of Physics, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- We report thermoelectric transport studies on Bi<sub>2</sub>Se<sub>3</sub> topological insulator thin films with varied thickness grown by molecular beam epitaxy. We find that the Seebeck coefficient and thermoelectric power factor decrease systematically with the reduction of film thickness. These experimental observations can be explained quantitatively by theoretical calculations based on realistic electronic band structure of the Bi<sub>2</sub>Se<sub>3</sub> thin films. Lastly, this work illustrates the crucial role played by the topological surface states on the thermoelectric transport of topological insulators, and sheds new light on further improvement of their thermoelectric performance.
- Published through SciTech Connect., 01/12/2016., New Journal of Physics 18 1 ISSN 1367-2630 AM, and Minghua Guo; Zhenyu Wang; Yong Xu; Huaqing Huang; Yunyi Zang; Chang Liu; Wenhui Duan; Zhongxue Gan; Shou-Cheng Zhang; Ke He; Xucun Ma; Qikun Xue; Yayu Wang.
- Funding Information:
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