Actions for Emission color-tuned light-emitting diode microarrays of nonpolar In<sub>x<
Emission color-tuned light-emitting diode microarrays of nonpolar In<sub>x</sub>Ga<sub>1–x</sub>N/GaN multishell nanotube heterostructures [electronic resource].
- Published
- Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy - Physical Description
- Article numbers 18,020 : digital, PDF file
- Additional Creators
- Los Alamos National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access
- Free-to-read Unrestricted online access
- Summary
- Integration of nanostructure lighting source arrays with well-defined emission wavelengths is of great importance for optoelectronic integrated monolithic circuitry. Here, we report on the fabrication and optical properties of GaN-based p–n junction multishell nanotube microarrays with composition-modulated nonpolar m-plane InxGa1–xN/GaN multiple quantum wells (MQWs) integrated on c-sapphire or Si substrates. Furthermore, we controlled the emission wavelengths in the visible spectral range of green to violet by varying the indium mole fraction of the InxGa1–xN MQWs in the range 0.13≤x≤0.36. Homogeneous emission from the entire area of the nanotube LED arrays was achieved via the formation of MQWs with uniform QW widths and composition by heteroepitaxy on the well-ordered nanotube arrays. Importantly, the wavelength-invariant electroluminescence emission was observed above a turn-on of 3.0 V because both the quantum-confinement Stark effect and band filling were suppressed due to the lack of spontaneous inherent electric field in the m-plane nanotube nonpolar MQWs. Fabricating the multishell nanotube LED microarrays with controlled emission colors has potential applications in monolithic nonpolar photonic and optoelectronic devices on commonly used c-sapphire and Si substrates.
- Report Numbers
- E 1.99:la-ur--17-21824
la-ur--17-21824 - Subject(s)
- Other Subject(s)
- Note
- Published through SciTech Connect.
12/09/2015.
"la-ur--17-21824"
Scientific Reports 5 1 ISSN 2045-2322 AM
Young Joon Hong; Chul-Ho Lee; Jinkyoung Yoo; Yong-Jin Kim; Junseok Jeong; Miyoung Kim; Gyu-Chul Yi. - Funding Information
- AC52-06NA25396
AC04-94AL85000
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