Method to reduce dislocation density in silicon using stress [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2013.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Additional Creators:
- United States. Department of Energy. Golden Field Office
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.
- Published through SciTech Connect.
Buonassisi, Anthony; Bertoni, Mariana; Argon, Ali; Castellanos, Sergio; Fecych, Alexandria; Powell, Douglas; Vogl, Michelle.
- Funding Information:
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