Method to reduce dislocation density in silicon using stress [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 2013.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy - Additional Creators:
- United States. Department of Energy. Golden Field Office, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- A crystalline material structure with reduced dislocation density and method of producing same is provided. The crystalline material structure is annealed at temperatures above the brittle-to-ductile transition temperature of the crystalline material structure. One or more stress elements are formed on the crystalline material structure so as to annihilate dislocations or to move them into less harmful locations.
- Report Numbers:
- E 1.99:8,389,999
8,389,999 - Subject(s):
- Note:
- Published through SciTech Connect.
03/05/2013.
"8,389,999"
"12/892,370"
Buonassisi, Anthony; Bertoni, Mariana; Argon, Ali; Castellanos, Sergio; Fecych, Alexandria; Powell, Douglas; Vogl, Michelle. - Funding Information:
- FG36-09GO19001
View MARC record | catkey: 24072793