Origin of thickness dependence of structural phase transition temperatures in BiFeO<sub>3</sub> thin films [electronic resource].
- Washington, D.C. : United States. Dept. of Energy. Office of Science, 2016.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- Article numbers 036,106 : digital, PDF file
- Additional Creators:
- Oak Ridge National Laboratory
United States. Department of Energy. Office of Science
United States. Department of Energy. Office of Scientific and Technical Information
- In this study, two structural phase transitions are investigated in highly strained BiFeO<sub>3</sub> thin films grown on LaAlO<sub>3</sub> substrates, as a function of film thickness and temperature via synchrotron x-ray diffraction. Both transition temperatures (upon heating: monoclinic MC to monoclinic MA, and MA to tetragonal) decrease as the film becomes thinner. The existence of an interface layer at the film-substrate interface, deduced from half-order peak intensities, contributes to this behavior only for the thinnest samples; at larger thicknesses (above a few nanometers) the temperature dependence can be understood in terms of electrostatic considerations akin to size effects in ferroelectric phase transitions, but observed here for structural phase transitions within the ferroelectric phase and related to the rearrangement rather than the formation of domains. For ultra-thin films, the tetragonal structure is stable at all investigated temperatures (down to 30 K).
- Published through SciTech Connect.
APL Materials 4 3 ISSN 2166-532X AM
Yongsoo Yang; Christianne Beekman; Wolter Siemons; Christian M. Schlepuetz; Nancy Senabulya; Roy Clarke; Hans M. Christen.
- Funding Information:
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