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Reversible conversion of dominant polarity in ambipolar polymer/graphene oxide hybrids [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy. Office of Basic Energy Sciences, 2015.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
Article numbers 9,446 : digital, PDF file
Additional Creators
Oak Ridge National Laboratory, United States. Department of Energy. Office of Basic Energy Sciences, and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The possibility to selectively modulate the charge carrier transport in semiconducting materials is extremely challenging for the development of high performance and low-power consuming logic circuits. Systematical control over the polarity (electrons and holes) in transistor based on solution processed layer by layer polymer/graphene oxide hybrid system has been demonstrated. The conversion degree of the polarity is well controlled and reversible by trapping the opposite carriers. Basically, an electron device is switched to be a hole only device or vice versa. Finally, a hybrid layer ambipolar inverter is demonstrated in which almost no leakage of opposite carrier is found. We conclude that this hybrid material has wide range of applications in planar p-n junctions and logic circuits for high-throughput manufacturing of printed electronic circuits.
Report Numbers
E 1.99:1259695
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Note
Published through SciTech Connect.
03/24/2015.
"srep09446"
Scientific Reports 5 ISSN 2045-2322 AM
Ye Zhou; Su -Ting Han; Prashant Sonar; Xinlei Ma; Jihua Chen; Zijian Zheng; V. A. L. Roy.
Funding Information
7004012
View MARC record | catkey: 24087215