Phase-field simulations of GaN growth by selective area epitaxy on complex mask geometries [electronic resource].
- Washington, D.C. : United States. National Nuclear Security Administration, 2015. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- Article numbers 194,302 : digital, PDF file
- Additional Creators:
- Sandia National Laboratories, United States. National Nuclear Security Administration, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Three-dimensional phase-field simulations of GaN growth by selective area epitaxy were performed. Furthermore, this model includes a crystallographic-orientation-dependent deposition rate and arbitrarily complex mask geometries. The orientation-dependent deposition rate can be determined from experimental measurements of the relative growth rates of low-index crystallographic facets. Growth on various complex mask geometries was simulated on both c-plane and a-plane template layers. Agreement was observed between simulations and experiment, including complex phenomena occurring at the intersections between facets. The sources of the discrepancies between simulated and experimental morphologies were also investigated. We found that the model provides a route to optimize masks and processing conditions during materials synthesis for solar cells, light-emitting diodes, and other electronic and opto-electronic applications.
- Published through SciTech Connect., 05/15/2015., "sand--2015-0722j", "563559", Journal of Applied Physics 117 19 ISSN 0021-8979 AM, and Larry K. Aagesen; Michael Elliott Coltrin; Jung Han; Katsuyo Thornton.
- Funding Information:
- AC04-94AL85000, SC0000957, and ACI-1053575
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