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Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate [electronic resource].

Published
Washington, D.C. : United States. Dept. of Energy, 2011.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Additional Creators
United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.
Report Numbers
E 1.99:7,884,446
7,884,446
Subject(s)
Note
Published through SciTech Connect.
02/08/2011.
"7,884,446"
"US patent application 12/235,086"
Mazur, Eric (Concord, MA), Shen; Mengyan (Belmont, MA).
INTL UTILITY EFFICIENCY PARTN
Funding Information
FG36-01GO11053
View MARC record | catkey: 24096247