Polarity compensation in ultra-thin films of complex oxides [electronic resource] : The case of a perovskite nickelate
- Washington, D.C. : United States. Dept. of Energy. Office of Science, 2014. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Physical Description:
- Article numbers 6,819 : digital, PDF file
- Additional Creators:
- Argonne National Laboratory, United States. Department of Energy. Office of Science, and United States. Department of Energy. Office of Scientific and Technical Information
- Restrictions on Access:
- Free-to-read Unrestricted online access
- We address the fundamental issue of growth of perovskite ultra-thin films under the condition of a strong polar mismatch at the heterointerface exemplified by the growth of a correlated metal LaNiO<sub>3</sub> on the band insulator SrTiO<sub>3</sub> along the pseudo cubic  direction. While in general the metallic LaNiO<sub>3</sub> film can effectively screen this polarity mismatch, we establish that in the ultra-thin limit, films are insulating in nature and require additional chemical and structural reconstruction to compensate for such mismatch. A combination of in-situ reflection high-energy electron diffraction recorded during the growth, X-ray diffraction, and synchrotron based resonant X-ray spectroscopy reveal the formation of a chemical phase La<sub>2</sub>Ni<sub>2</sub>O<sub>5</sub> (Ni<sup>2+</sup>) for a few unit-cell thick films. First-principles layer-resolved calculations of the potential energy across the nominal LaNiO<sub>3</sub>/SrTiO<sub>3</sub> interface confirm that the oxygen vacancies can efficiently reduce the electric field at the interface.
- Published through SciTech Connect., 10/29/2014., "srep06819", Scientific Reports 4 ISSN 2045-2322 AM, and Middey, S.; Rivero, P.; Meyers, D.; Kareev, M.; Liu, X.; Cao, Y.; Freeland, J.; Barraza-Lopez, S.; Chakhalian, J.
- Funding Information:
View MARC record | catkey: 24474395