Method for passivating crystal silicon surfaces [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2009.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Additional Creators:
- United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- In a method of making a c-Si-based cell or a .mu.c-Si-based cell, the improvement of increasing the minority charge carrier's lifetime, comprising: a) placing a c-Si or polysilicon wafer into CVD reaction chamber under a low vacuum condition and subjecting the substrate of the wafer to heating; and b) passing mixing gases comprising NH.sub.3/H.sub.2 through the reaction chamber at a low vacuum pressure for a sufficient time and at a sufficient flow rate to enable growth of an a-Si:H layer sufficient to increase the lifetime of the c-Si or polysilicon cell beyond that of the growth of an a-Si:H layer without treatment of the wafer with NH.sub.3/H.sub.2.
- Published through SciTech Connect.
"US Patent Application 11/574,167"
Wang, Qi (Littleton, CO); Wang, Tihu (Littleton, CO); Page, Matthew R. (Littleton, CO); Yan, Yanfa (Littleton, CO).
Alliance For Sustainable Energy, LLC (Golden, CO)
- Funding Information:
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