Actions for Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics [electronic resource].

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Doping and electronic properties of GaAs grown by close-spaced vapor transport from powder sources for scalable III–V photovoltaics [electronic resource].

Published
Washington, D.C. : United States. Office of the Assistant Secretary of Energy Efficiency and Renewable Energy, 2014.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
Physical Description
pages 278-285 : digital, PDF file
Additional Creators
United States. Office of the Assistant Secretary of Energy Efficiency and Renewable Energy and United States. Department of Energy. Office of Scientific and Technical Information
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Summary
The high balance-of-system costs of photovoltaic (PV) installations indicate that reductions in cell $/W costs alone are likely insufficient for PV electricity to reach grid parity unless energy conversion efficiency is also increased. Technologies which yield both high-efficiency cells (>25%) and maintain low costs are needed. GaAs and related III-V semiconductors are used in the highest-efficiency single- and multi-junction photovoltaics, but the technology is too expensive for non-concentrated terrestrial applications. This is due in part to the difficulty of scaling the metal-organic chemical vapor deposition (MOCVD) process, which relies on expensive reactors and employs toxic and pyrophoric gas-phase precursors such as arsine and trimethyl gallium, respectively. In this study, we describe GaAs films made by an alternative close-spaced vapor transport (CSVT) technique which is carried out at atmospheric pressure and requires only bulk GaAs, water vapor, and a temperature gradient in order to deposit crystalline films with similar electronic properties to that of GaAs deposited by MOCVD. CSVT is similar to the vapor transport process used to deposit CdTe thin films and is thus a potentially scalable low-cost route to GaAs thin films.
Report Numbers
E 1.99:doe-uo-05957--1
doe-uo-05957--1
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Note
Published through SciTech Connect.
09/01/2014.
"doe-uo-05957--1"
Energy & Environmental Science 8 1 ISSN 1754-5692; EESNBY AM
Ritenour, Andrew; Boucher, Jason; DeLancey, Robert; Greenaway, Ann; Aloni, Shaul; Boettcher, Shannon.
Univ. of Oregon, Eugene, OR (United States)
Funding Information
EE0005957
View MARC record | catkey: 24496556