Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2008. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Additional Creators:
- United States. Department of Energy and United States. Department of Energy. Office of Scientific and Technical Information
- The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.
- Published through SciTech Connect., 10/28/2008., "7,442,629", "US patent application 11/196,929", Mazur, Eric (Concord, MA); Shen, Mengyan (Arlington, MA)., and INTL UTILITY EFFICIENCY PARTN
- Funding Information:
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