Ultra-high current density thin-film Si diode [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2008.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Additional Creators:
- Midwest Research Institute (Kansas City, Mo. )
United States. Department of Energy
United States. Department of Energy. Office of Scientific and Technical Information
- A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.
- Published through SciTech Connect.
"US patent application 10/488,902"
Wang, Qi (Littleton, CO).
- Funding Information:
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