Ultra-high current density thin-film Si diode [electronic resource].
- Published:
- Washington, D.C. : United States. Dept. of Energy, 2008.
Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy - Additional Creators:
- Midwest Research Institute (Kansas City, Mo. ), United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
Access Online
- Restrictions on Access:
- Free-to-read Unrestricted online access
- Summary:
- A combination of a thin-film .mu.c-Si and a-Si:H containing diode structure characterized by an ultra-high current density that exceeds 1000 A/cm.sup.2, comprising: a substrate; a bottom metal layer disposed on the substrate; an n-layer of .mu.c-Si deposited the bottom metal layer; an i-layer of .mu.c-Si deposited on the n-layer; a buffer layer of a-Si:H deposited on the i-layer, a p-layer of .mu.c-Si deposited on the buffer layer; and a top metal layer deposited on the p-layer.
- Report Numbers:
- E 1.99:7,361,406
7,361,406 - Subject(s):
- Note:
- Published through SciTech Connect.
04/22/2008.
"7,361,406"
"US patent application 10/488,902"
Wang, Qi (Littleton, CO). - Funding Information:
- AC36-99GO10337
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