Selective etchant for oxide sacrificial material in semiconductor device fabrication [electronic resource].
- Washington, D.C. : United States. Dept. of Energy, 2005. and Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy
- Additional Creators:
- Sandia National Laboratories, United States. Department of Energy, and United States. Department of Energy. Office of Scientific and Technical Information
- An etching composition and method is disclosed for removing an oxide sacrificial material during manufacture of semiconductor devices including micromechanical, microelectromechanical or microfluidic devices. The etching composition and method are based on the combination of hydrofluoric acid (HF) and sulfuric acid (H.sub.2 SO.sub.4). These acids can be used in the ratio of 1:3 to 3:1 HF:H.sub.2 SO.sub.4 to remove all or part of the oxide sacrificial material while providing a high etch selectivity for non-oxide materials including polysilicon, silicon nitride and metals comprising aluminum. Both the HF and H.sub.2 SO.sub.4 can be provided as "semiconductor grade" acids in concentrations of generally 40-50% by weight HF, and at least 90% by weight H.sub.2 SO.sub.4.
- Published through SciTech Connect., 05/17/2005., "6,893,578", "10/010,850", and Clews, Peggy; Mani, Seethambal.
- Funding Information:
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