Accurate Junction-Depth Measurements Using Chemical Staining / R. Subrahmanyan, HZ. Massoud, RB. Fair
- Conference Author:
- Semiconductor Fabrication: Technology and Metrology (1988 : Santa Clara, California)
- Physical Description:
- 1 online resource (24 pages) : illustrations, figures, tables
- Additional Creators:
- Fair, RB., Massoud, HZ., Subrahmanyan, R., American Society for Testing and Materials, and ASTM International
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License restrictions may limit access. - Summary:
- The techniques of chemical staining, spreading resistance, and secondary-ion mass spectrometry (SIMS) have been used in the determination of the depth of diffused and ion-implanted junctions in an effort to estimate the accuracy of the staining method. Computer simulations were also used to study the behaviour of charge carriers in the semiconductor under illumination, and the accuracy of the junction depth obtained from raw spreading resistance data. It was observed that it is possible to measure junction depth reproducibly, to within 200 ¿̐ư of the metallurgical junction depth, by carefully controlling the surface preparation of the sample and the lighting conditions under which the staining takes place.
- Dates of Publication and/or Sequential Designation:
- Volume 1989, Issue 990 (January 1989)
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- Other Subject(s):
- ISBN:
- 9780803151079 (e-ISBN)
9780803112735
0803112734 - Digital File Characteristics:
- text file PDF
- Bibliography Note:
- Includes bibliographical references 32.
- Other Forms:
- Also available online via the World Wide Web. Tables of contents and abstracts freely available; full-text articles available by subscription.
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Also available in PDF edition. - Reproduction Note:
- Electronic reproduction. W. Conshohocken, Pa. : ASTM International, 1989. Mode of access: World Wide Web. System requirements: Web browser. Access may be restricted to users at subscribing institutions.
- Technical Details:
- Mode of access: World Wide Web.
- Source of Acquisition:
- ASTM International PDF Purchase price USD25.
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