Reaction Mechanisms and Rate Limitations in Dry Etching of Silicon Dioxide with Anhydrous Hydrogen Fluoride / LD. Clements, JE. Busse, J. Mehta

Conference Author:: Semiconductor Fabrication: Technology and Metrology (1988 : Santa Clara, California)
Physical Description:: 1 online resource (20 pages) : illustrations, figures, tables
Additional Creators:: Busse, JE., Clements, LD., Mehta, J., American Society for Testing and Materials, and ASTM International

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Summary:

A novel dry etching process for silicon dioxide has been developed. This process, carried out at ambient temperature and pressure, uses anhydrous hydrogen fluoride, water vapor in a nitrogen carrier, and a unique processing sequence to achieve etch rates of about 200A/second, with 5 percent or better uniformity.

Dates of Publication and/or Sequential Designation:

Volume 1989, Issue 990 (January 1989)

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ISBN:

9780803151079 (e-ISBN)
9780803112735
0803112734

Digital File Characteristics:

text file PDF

Bibliography Note:

Includes bibliographical references 15.

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Also available online via the World Wide Web. Tables of contents and abstracts freely available; full-text articles available by subscription.
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Also available in PDF edition.

Reproduction Note:

Electronic reproduction. W. Conshohocken, Pa. : ASTM International, 1989. Mode of access: World Wide Web. System requirements: Web browser. Access may be restricted to users at subscribing institutions.

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Mode of access: World Wide Web.

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ASTM International PDF Purchase price USD25.

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