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Neutron Transmutation Doping of Semi-Insulating Czochralskigrown GaAs / AT. Hunter, MH. Young, HV. Winston, OJ. Marsh, RR. Hart

Conference Author
Semiconductor Processing (1984 : San Jose, California)
Physical Description
1 online resource (12 pages) : illustrations, figures, tables
Additional Creators
Hart, RR., Hunter, AT., Marsh, OJ., Winston, HV., Young, MH., American Society for Testing and Materials, and ASTM International
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Summary
We have carried out neutron transmutation doping of undoped, initially semi-insulating, Czochralski-grown GaAs. We employed a series of nine neutron doses, which added between 2¿̐ư1015 and 5¿̐ư1017 cm¿̐ư3 Ge and Se to the samples. Electron concentrations determined from Hall effect measurements on annealed samples with the three highest doses agree with the concentration of added Ge and Se within 5%, although the uncertainty in the measurements is 20%. These data are consistent with photoluminescence data which suggest 10% of the amphoteric Ge acts as an acceptor in the annealed material. Room temperature and temperature dependent Hall data place an upper limit of 4.9¿̐ư1015 cm¿̐ư3 on the concentration of donors of intermediate depth, consistent with our model for semi-insulating material.
Dates of Publication and/or Sequential Designation
Volume 1984, Issue 850 (January 1984)
Subject(s)
Other Subject(s)
ISBN
0803104030
9780803104037
9780803149151 (e-ISBN)
Digital File Characteristics
text file PDF
Bibliography Note
Includes bibliographical references 18.
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Also available in PDF edition.
Also available online via the World Wide Web. Tables of contents and abstracts freely available; full-text articles available by subscription.
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Reproduction Note
Electronic reproduction. W. Conshohocken, Pa. : ASTM International, 1984. Mode of access: World Wide Web. System requirements: Web browser. Access may be restricted to users at subscribing institutions.
Technical Details
Mode of access: World Wide Web.
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ASTM International PDF Purchase price USD25.
View MARC record | catkey: 28002498