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A Study of the Spatial Distribution of the Oxygen Content in Silicon Wafers Using an Infrared Transmission Microscope / K. Krishnan, D. Kuehl

Conference Author
Semiconductor Processing (1984 : San Jose, California)
Physical Description
1 online resource (10 pages) : illustrations, figures, tables
Additional Creators
Krishnan, K., Kuehl, D., American Society for Testing and Materials, and ASTM International
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Summary
A new high sensitivity microsampling accessory incorporating an all-reflecting microscope for use with FT-IR instruments is described. Measurements of the interstitial oxygen and substitutional carbon concentrations in silicon from sampling areas as small as 100 ?m ¿̐ư 100 ?m are described. A reflectance version of the microsampling accessory has been used for mapping the epitaxial film thickness on silicon from areas as small as 50 ?m ¿̐ư 50 ?m.
Dates of Publication and/or Sequential Designation
Volume 1984, Issue 850 (January 1984)
Subject(s)
Other Subject(s)
ISBN
9780803149151 (e-ISBN)
9780803104037
0803104030
Digital File Characteristics
text file PDF
Bibliography Note
Includes bibliographical references 7.
Other Forms
Also available online via the World Wide Web. Tables of contents and abstracts freely available; full-text articles available by subscription.
Full text article also available for purchase.
Also available in PDF edition.
Reproduction Note
Electronic reproduction. W. Conshohocken, Pa. : ASTM International, 1984. Mode of access: World Wide Web. System requirements: Web browser. Access may be restricted to users at subscribing institutions.
Technical Details
Mode of access: World Wide Web.
Source of Acquisition
ASTM International PDF Purchase price USD25.
View MARC record | catkey: 28002499