Actions for Damage Aspects of Ingot-to-Wafer Processing
Damage Aspects of Ingot-to-Wafer Processing / LD. Dyer
- Conference Author
- Emerging Semiconductor Technology (1986 : San Jose, California)
- Physical Description
- 1 online resource (16 pages) : illustrations, figures, tables
- Additional Creators
- Dyer, LD., American Society for Testing and Materials, and ASTM International
Access Online
- Restrictions on Access
- Subscription required for access to full text.
License restrictions may limit access. - Summary
- Intensive efforts have been put into the growth of silicon crystals to suit today's solar cell and integrated circuit requirements. Each step of processing the crystal must also receive concentrated attention to preserve the grown-in perfection and to provide a suitable device-ready wafer at reasonable cost.
- Dates of Publication and/or Sequential Designation
- Volume 1987, Issue 960 (January 1987)
- Subject(s)
- Other Subject(s)
- ISBN
- 9780803150218 (e-ISBN)
9780803104594
0803104596 - Digital File Characteristics
- text file PDF
- Bibliography Note
- Includes bibliographical references 23.
- Other Forms
- Also available online via the World Wide Web. Tables of contents and abstracts freely available; full-text articles available by subscription.
Full text article also available for purchase.
Also available in PDF edition. - Reproduction Note
- Electronic reproduction. W. Conshohocken, Pa. : ASTM International, 1987. Mode of access: World Wide Web. System requirements: Web browser. Access may be restricted to users at subscribing institutions.
- Technical Details
- Mode of access: World Wide Web.
- Source of Acquisition
- ASTM International PDF Purchase price USD25.
View MARC record | catkey: 28009970