High Reliability Infrared Measurements of Oxygen and Carbon in Silicon / N. Inoue, T. Arai, T. Nozaki, K. Endo, K. Mizuma
- Restrictions on Access:
- License restrictions may limit access.
Subscription required for access to full text.
- High reliability infrared measurements of oxygen and carbon in silicon single crystals are presented. One is the preparation and distribution of standard sample sets with known oxygen contents. Oxygen content range is 5 to 11¿̐ư1017 atoms/cm3 and the accuracy is estimated to be within 4¿̐ư1016 atoms/cm3. The other is the establishment of a standard infrared measurement procedure for carbon performed by round robin infrared measurement and charged particle activation analysis. From the procedure the conversion coefficient is determined to be (8.5¿̐ư0.9)¿̐ư1016 atoms¿̐ưcm¿̐ư3/cm¿̐ư1.
- Dates of Publication and/or Sequential Designation:
- Volume 1987, Issue 960 (January 1987)
- Digital File Characteristics:
- text file PDF
- Bibliography Note:
- Includes bibliographical references 6.
- Other Forms:
- Also available in PDF edition.
Also available online via the World Wide Web. Tables of contents and abstracts freely available; full-text articles available by subscription.
Full text article also available for purchase.
- Reproduction Note:
- Electronic reproduction. W. Conshohocken, Pa. : ASTM International, 1987. Mode of access: World Wide Web. System requirements: Web browser. Access may be restricted to users at subscribing institutions.
- Technical Details:
- Mode of access: World Wide Web.
- Source of Acquisition:
- ASTM International PDF Purchase price USD25.
View MARC record | catkey: 28009976