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Deposition and Properties of Ultra-Thin High Dielectric Constant Insulators / S. Roberts, JG. Ryan, DW. Martin

Conference Author
Emerging Semiconductor Technology (1986 : San Jose, California)
Physical Description
1 online resource (13 pages) : illustrations, figures, tables
Additional Creators
Martin, DW., Roberts, S., Ryan, JG., American Society for Testing and Materials, and ASTM International
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Summary
Exploratory studies have been carried out with reactively sputtered thin films of several transition metal oxides and co-sputtered mixtures with SiO2. Good insulation behavior is observed following postdeposition oxidation anneals. Best overall electrical properties are observed with mixtures of HfO2 and SiO2, in combination with additional layers of thermal SiO2 and CVD Si3N4. Significant reduction in dielectric constant is observed with all the transition metal oxides with sub-30 nm films. High capacitance with stacks containing thermal SiO2, mixtures of HfO2 and SiO2, and CVD Si3N4 may be due to a charge storage mechanism.
Dates of Publication and/or Sequential Designation
Volume 1987, Issue 960 (January 1987)
Subject(s)
Other Subject(s)
ISBN
9780803150218 (e-ISBN)
9780803104594
0803104596
Digital File Characteristics
text file PDF
Bibliography Note
Includes bibliographical references 27.
Other Forms
Also available online via the World Wide Web. Tables of contents and abstracts freely available; full-text articles available by subscription.
Full text article also available for purchase.
Also available in PDF edition.
Reproduction Note
Electronic reproduction. W. Conshohocken, Pa. : ASTM International, 1987. Mode of access: World Wide Web. System requirements: Web browser. Access may be restricted to users at subscribing institutions.
Technical Details
Mode of access: World Wide Web.
Source of Acquisition
ASTM International PDF Purchase price USD25.
View MARC record | catkey: 28009991