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Design of shallow and thermally stable contacts on antimonide-based semiconductors [electronic resource] / by Hsiao-an Wang
Author:
Wang, Hsiao-an.
Published:
[Place of publication not identified] : [publisher not identified], 2004.
Online Version
etda.libraries.psu.edu
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Other Subject(s):
metal/semiconductor contact
ohmic contact
Schottky barrier height
gate metallization
shallow reaction
thermal stability
aging
wet processing
surface passivation
antimonide based compound semiconductors
InGaSb
InAs
AlGaAsSb
HBT
HEMT
I-V characteristics
cross-sectional TEM
Dissertation Note:
Ph.D. Pennsylvania State University 2004.
Note:
Mode of access: World Wide Web.
Reproduction Note:
Microfilm (positive). 1 reel 35 mm. (University Microfilms 31-57701)
Technical Details:
The full text of the dissertation is available as a Adobe Acrobat .pdf file (143 p.) ; Adobe Acrobat Reader required to view the file.
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| catkey: 2845059