Evaluation of Advanced Semiconductor Materials by Electron Microscopy [electronic resource] / edited by David Cherns
- New York, NY : Springer US : Imprint: Springer, 1989.
- 1st ed. 1989.
- Physical Description:
- 412 pages : online resource
- Additional Creators:
- Cherns, David and SpringerLink (Online service)
- High Resolution Electron Microscopy -- HREM of Edge-on Interfaces and Defects -- Image Processing Applied to HRTEM Images of Interfaces -- II-VI Semiconductor Interfaces -- High Resolution Electron Microscopy Study of Indium Distribution in InAs/GaAs Multilayers -- Convergent Beam Electron Diffraction -- Convergent Beam Electron Diffraction Studies of Defects, Strains and Composition Profiles in Semiconductors -- HOLZ Diffraction from Semiconductor Superlattices -- Determination of Composition and Ionicity by Critical Voltage and Other Electron Diffraction Methods -- Measurement of Structure-Factor Phases by Electron Diffraction for the Study of Bonding in Non-Centrosymmetric Semiconductors -- X-ray and Electron Energy Loss Microanalysis -- EDX and EELS Studies of Segregation in STEM -- Cathodoluminescence and Electron Beam Induced Conductivity -- TEM-Cathodoluminescence Study of Single and Multiple Quantum Wells of MBE Grown GaAs/AlGaAs -- EBIC Studies of Individual Defects in Lightly Doped Semiconductors CdTe as an Example -- Schottky Barriers -- Electronic Structure and Fermi Level Pinning Obtained with Spatially Resolved Electron Energy Loss Scattering -- Epitaxial NiSi2 and CoSi2 Interfaces -- Further Analysis of Interfaces -- The Fresnel Method for the Characterisation of Interfaces -- Strains and Misfit Dislocations at Interfaces -- Ordering/decomposition/analysis of local strains -- TEM and STEM Observations of Composition Variations in III-V Semiconductors -- Transmission Electron Microscopy and Transmission Electron Diffraction Studies of Atomic Ordering in Group III-V Compound Semiconductor Alloys -- Elastic Relaxation and TEM Image Contrasts in Thin Composition-Modulated Semiconductor Crystals -- Surface Microscopy and Diffraction -- Surface and Thin Film Growth Studied by Reflection High Energy Electron Diffraction -- Low Energy Electron Microscopy (LEEM) and Photoemission Microscopy (PEEM) of Semiconductor Surfaces -- Transmission Electron Microscopy of In-Situ Deposited Films on Silicon -- Surface Studies by SEM and STEM -- Transmission and Reflection Electron Microscopy on Cleaved Edges of III-V Multilayered Structures -- Defects in Heteroepitaxy -- Dislocation Generation and Elimination in GaAs on Si -- The Microstructure of GaAs/Si Films Studied as a Function of Heat Treatment -- Electron Microscopy of Gex Sil-x/Si Strained Layer Superlattices -- Defect Structure in Low and High Misfit Systems -- In-Situ Electron Microscope Studies of Misfit Dislocation Introduction into Gex Sil-x/Si Heterostructures -- Misfit Dislocations in Inx Gal-x As/GaAs Heterostructures near the Critical Thickness -- Summary of Discussion on Instrumental Requirements for the Evaluation of Advanced Semiconductors by Electron Microscopy.
- The last few years have ~een rapid improvements in semiconductor growth techniques which have produced an expanding range of high quality heterostructures for new semiconductor devises. As the dimensions of such structures approach the nanometer level, it becomes increasingly important to characterise materials properties such as composition uniformity, strain, interface sharpness and roughness and the nature of defects, as well as their influence on electrical and optical properties. Much of this information is being obtained by electron microscopy and this is also an area of rapid progress. There have been advances for thin film studies across a wide range of techniques, including, for example, convergent beam electron diffraction, X-ray and electron energy loss microanalysis and high spatial resolution cathodoluminescence as well as by conventional and high resolution methods. Important develop ments have also occurred in the study of surfaces and film growth phenomena by both microscopy and diffraction techniques. With these developments in mind, an application was made to the NATO Science Committee in late summer 1987 to fund an Advanced Research Work shop to review the electron microscopy of advanced semiconductors. This was subsequently accepted for the 1988 programme and became the "NATO Advanced Research Workshop on the Evaluation of Advanced Semiconductor Materials by Electron Microscopy". The Workshop took place in the pleasant and intimate surroundings of Wills Hall, Bristol, UK, during the week 11-17 September 1988 and was attended by fifty-five participants from fourteen countries.
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