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Electronic Materials [electronic resource] : A New Era in Materials Science / edited by James R. Chelikowsky, Alfonso Franciosi

Published
Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 1991.
Edition
1st ed. 1991.
Physical Description
XIV, 341 pages : online resource
Additional Creators
Chelikowsky, James R., Franciosi, Alfonso, and SpringerLink (Online service)
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Contents
1. Introduction -- References -- 2. The Simplest Ab Initio Theory of Electronic Structure -- 2.1 Tight-Binding Theory -- 2.2 Universal Parameters -- 2.3 A Diatomic Molecule, N2 -- 2.4 A Simplification Using Hybrids -- 2.5 Cohesion of N2 -- 2.6 Polarizability of N2 -- 2.7 Tetrahedral Semiconductor Bonds -- 2.8 Semiconductor Energy Bands -- 2.9 Cohesion in Semiconductors -- 2.10 The Dielectric Properties -- 2.11 Ionic Crystals -- 2.12 Covalency in Ionic Compounds -- 2.13 Transition-Metal Compounds -- 2.14 Summary -- References -- 3. Theory of Electronic Excitations in Solids -- 3.1 Quasiparticle Theory of Electron Excitations -- 3.2 Band Gaps and Excitation Spectra of Bulk Crystals -- 3.3 Surfaces, Interfaces, Superlattices, and Clusters -- 3.4 Model Dielectric Matrix -- 3.5 Summary and Conclusions -- References -- 4. Determination of the Electronic Structure of Solids -- 4.1 Band Mapping with Photoemission and Inverse Photoemission -- 4.2 Understanding Semiconductors from First Principles -- 4.3 Magnetic Storage and Thin Film Magnetism -- 4.4 Optoelectronics and Excited State Spectroscopy -- 4.5 Spatial Resolution -- 4.6 Packaging, Polymers, and Core Levels -- 4.7 Summary -- References -- 5. Predicting the Properties of Solids, Clusters and Superconductors -- 5.1 Background -- 5.2 Surfaces and Interfaces -- 5.3 Total Energies and Structural Properties -- 5.4 Compressibilities and Empirical Theories -- 5.5 Metallic Clusters -- 5.6 Superconductivity -- 5.7 Conclusions -- References -- 6. High-Temperature Superconductivity: The Experimental Situation -- 6.1 Structural and Chemical Nature of the New Materials -- 6.2 The Superconducting State: Macroscopic Properties -- 6.3 Microscopic Superconducting Properties -- 6.4 Theoretical Considerations and Discussion -- References -- 7. Surface Structure and Bonding of Tetrahedrally Coordinated Compound Semiconductors -- 7.1 Key Concepts in Semiconductor Surface Chemistry -- 7.2 Zincblende (110) Surfaces -- 7.3 Wurtzite Cleavage Surfaces -- 7.4 Adsorption on Zincblende (110) Surfaces -- 7.5 Synopsis -- References -- 8. Formation and Properties of Metal-Semiconductor Interfaces -- 8.1 Experimental Techniques and Analysis -- 8.2 Interface Formation at 300 K -- 8.3 Low-Temperature Interface Formation -- 8.4 Surface Photovoltaic Effects -- 8.5 Interface Formations with Metal Ions -- 8.6 Interfaces Formed by Metal Cluster Deposition -- 8.7 Prospects and Future Developments -- References -- 9. Electronic States in Semiconductor Superlattices and Quantum Wells: An Overview -- 9.1 Envelope-Function Description of Electronic States -- 9.2 External Fields -- 9.3 Excitons in Quantum Wells -- References -- 10. Photonic and Electronic Devices Based on Artificially Structured Semiconductors -- 10.1 Resonant Tunneling Bipolar Transistors with a Double Barrier in the Base -- 10.2 Devices with Multiple Peak I-V Characteristics and Multiple-State RTBTs -- 10.3 Circuit Applications of Multiple-State RTBTs -- 10.4 Gated Quantum Well and Superlattice-Base Transistors -- 10.5 Quasi-Electric Fields in Graded-Gap Materials -- 10.6 Heterojunction Bipolar Transistors with Graded-Gap Layers -- 10.7 Multilayer Sawtooth Materials -- 10.8 AlGaAs Floating-Gate Memory Devices with Graded-Gap Injector -- References -- 11. Quantum Structural Diagrams -- 11.1 Interatomic Forces -- 11.2 Ionic Crystals -- 11.3 Covalent Crystals -- 11.4 Metallic Compounds and Alloys -- 11.5 Molecular Structure Diagrams -- 11.6 Deductive Calculations -- 11.7 Prospects -- References -- 12. Ion and Laser Beam Processing of Semiconductors: Phase Transitions in Silicon -- 12.1 Ion Implantation -- 12.2 Amorphization and Solid Phase Epitaxy -- 12.3 Ion-Beam Induced Epitaxy, Diffusion and Segregation -- 12.4 Thermodynamic and Kinetic Properties of Amorphous Si -- 12.5 Liquid Phase Crystal Growth and Dopant Segregation -- 12.6 Melting of Amorphous Si: A First-Order Phase Transition -- 12.7 Conclusion: Undercooling and Explosive Crystallization -- 12.8 Update: The State of Amorphous Si -- References.
Summary
Modem materials science is exploiting novel tools of solid-state physics and chemistry to obtain an unprecedented understanding of the structure of matter at the atomic level. The direct outcome of this understanding is the ability to design and fabricate new materials whose properties are tailored to a given device ap­ plication. Although applications of materials science can range from low weight, high strength composites for the automobile and aviation industry to biocompatible polymers, in no other field has progress been more strikingly rapid than in that of electronic materials. In this area, it is now possible to predict from first principles the properties of hypothetical materials and to construct artificially structured materials with layer-by-Iayer control of composition and microstructure. The resulting superlattices, multiple quantum wells, and high temperature superconductors, among others, will dominate our technological future. A large fraction of the current undergraduate and graduate students in science and engineering will be directly involved in furthering the revolution in electronic materials. With this book, we want to welcome such students to electronic materials research and provide them with an introduction to this exciting and rapidly developing area of study. A second purpose of this volume is to provide experts in other fields of solid­ state physics and chemistry with an overview of contemporary research within the field of electronic materials.
Subject(s)
ISBN
9783642843594
Digital File Characteristics
PDF
text file
Part Of
Springer Nature eBook
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