Amorphous and Crystalline Silicon Carbide IV [electronic resource] : Proceedings of the 4th International Conference, Santa Clara, CA, October 9-11, 1991 / edited by Cary Y. Yang, M.Mahmudur Rahman, Gary L. Harris
- Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 1992.
- 1st ed. 1992.
- Physical Description:
- XII, 432 pages : online resource
- Additional Creators:
- Yang, Cary Y., Rahman, M.Mahmudur, Harris, Gary L., and SpringerLink (Online service)
- I Growth of Crystalline Silicon Carbide -- Recent Progress in Epitaxial Growth of SiC -- Si1-yCy Alloys - Extending Si-Based Heterostructure Engineering -- Investigation of the Growth of 3C-SiC and 6H-SiC Films on Low-Tilt-Angle Vicinal (0001) 6H-SiC Wafers -- Low Temperature Homoepitaxial Growth of 6H-SiC by VPE Method -- Heteroepitaxial Growth of 3C-SiC by LPCVD with Alternate Gas Supply -- Mechanisms in the Low Pressure Growth of SiC-on-Si by RTCVD -- Effects of CH3Cl Gas on Heteroepitaxial Growth of (?-SiC on Si(111) by Chemical Vapor Deposition -- Growth Simulation of SiC Polytypes and Application to DPB-Free 3C-SiC on Alpha-SiC Substrates -- Epitaxial Growth of Cubic SiC Using Various Alkyl-Silicon Compounds by Chemical Vapor Deposition -- Growth and Characterization of ?-SiC Films Grown on Si by Gas-Source Molecular Beam Epitaxy -- Atomic Layer Control of ?-SiC(001) Surface -- Growth and Characterization of 6H-SiC Bulk Crystals by the Sublimation Method -- Liquid Phase Epitaxy of SiC-AlN Solid Solutions -- Comparison of Dilutely Doped p-Type 6H-SiC from a Variety of Sources -- Growth of Cubic Silicon Carbide on Silicon Using the C2HCl3-SiH4-H2 System -- AC Plasma-Assisted Chemical Vapor Deposition of Cubic Silicon Carbide on Silicon Substrate -- II Characterization of Crystalline Silicon Carbide -- Hall Effect and Infrared Absorption Measurements on Nitrogen Donors in 6H-SiC -- Nitrogen Impurities in 3C-SiC Epilayers -- Electron Nuclear Double Resonance Investigations of Nitrogen Donors in 6H and 4H-SiC -- Recrystallization and Electrical Properties of High-Temperature Implanted (N,Al) 6H-SiC Layers -- EPR in the 2-mm Range and Optical Absorption of the Native Defect in 4H-SÍC Epilayers -- The Structure of the D-Center in Silicon Carbide - A Study with Electron Nuclear Double Resonance -- Oxidation Studies for 6H-SiC -- Electronic Band Structures of SiC Calculated from a Hybrid Pseudopotential and Tight-Binding Model -- Metallization Studies on Epitaxial 6H-SiC -- TEM Study of ?-SiC Films Grown on (111) Silicon Substrates -- Thermal Oxidation of Single-Crystal Silicon Carbide: Kinetic, Electrical, and Chemical Studies -- Determination of Stacking-Fault Abundances and Distributions in SiC Using XRPD and HRTEM -- Structural Defects in Epitaxial Layers SiC-3C/Si Grown by CVD -- Observation of Linear Electro-Optic Effect in Cubic Silicon Carbide -- Optically Induced Near-IR Absorption Lines in 6H-SiC -- Interference Fringes in the Infrared Reflectance of 6H-SiC Films on 6H-SiC Substrates -- Low Temperature Photoluminescence of SiC: A Method for Material Characterization and the Influence of an Uniaxial Stress on the Spectra -- III Growth and Characterization of Polycrystalline, Microcrystalline, and Amorphous Silicon Carbide -- Novel Feedstocks for a-SiC:H Films -- Studies of 1,3-Disilacyclobutanes as Single-Source CVD Precursors to Silicon Carbide -- Frequency Dependence of Conductivity of Hydrogenated Amorphous SiC Films Prepared by PCVD -- Formation of SiC for Microelectronic Applications by C Implantation into Doped a-S -- Polycrystalline SiC Films Prepared by a Plasma Assisted Method at Temperatures Lower than 1000°C -- Si?C1?? Alloys Deposited on Silicon Using a Low-Cost, Hot-Wall, LPCVD Reactor -- Low Temperature PECVD Growth and Characterization of a-SiC:H Films Deposited from Silacyclobutane and Silane/Methane Precursor Gases -- Study of Optimum Condition for Microcrystalline SiC Film Formation by ECR Plasma CVD Method -- IV Applications -- Applications for 6H-Silicon Carbide Devices -- HBTs Using a-SiC and µc-Si -- Impact of SiC on Power Devices -- SiC?:F Hetero-Emitter and Epitaxial-Base Bipolar Transistors -- A New Application of a-SiC Films for Realizing High Current Gain Si Heterojunction Bipolar Transistors -- The Development of ECR-CVD SiC Coatings for X-Ray Mask Membranes -- Pattern Etching of Crystalline SiC by KrF Excimer Laser -- Electrical Characterization of PiN Diode Structures in 6H-SiC -- High-Temperature Rectifiers, UV Photodiodes, and Blue LEDs in 6H-SiC -- Dependence of the Au-SiC(6H) Schottky Barriers Height on the SiC Surface Treatment -- Photoelectrochemical Etching and Dopant Selective Etch-Stops in SiC -- Fabrication and Electrical Properties of ?-SiC/Si and Poly-SiC/Si Solar Cells -- Simulations of Ge and C Implantations to Form Si1??Ge? BJT -- The Light Emitting Diodes on the Basis of Fast Electron Irradiated Silicon Carbide -- Graded-Gap and Quantum-Well Injection a-SiC:H p-i-n Light-Emitting Diodes -- High-Temperature and High-Voltage Diamond Devices -- Gamma-Ray Irradiation Effects on Cubic Silicon Carbide Metal-Oxide-Semiconductor Structure -- Formation of SiGe/Si Heterostructures by Low-Temperature Germanium Ion Implantation -- Characterization of Ge and C Implanted Si Diodes -- Selective Growth of SiC and Application to Heterojunction Devices -- Electrical Characterization of Epitaxial Titanium Contacts to Alpha (6H) Silicone Carbide -- Effect of H2 Additive on Reactive Ion Etching of ?-SiC in CHF3/O2 Plasma -- Index of Contributors.
- Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.
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