Integrated power devices and TCAD simulation / Yue Fu, Zhanming Li, Wai Tung Ng, Johnny K.O. Sin
- Fu, Yue (Electrical engineer)
- Boca Raton : CRC Press, 
- Copyright Date:
- Physical Description:
- 1 online resource (xvii, 338 pages) : illustrations
- Additional Creators:
- Li, Zhanming, Ng, Wai Tung, and Sin, Johnny K. O.
- Language Note:
- Preface; About the Authors; Chapter 1 Power Electronics, the Enabling Green Technology; 1.1 Introduction to Power Electronics; 1.2 History of Power Electronics; 1.3 DC/DC Converters; 1.4 Linear Voltage Regulators; 1.5 Switched Capacitor DC/DC Converters (Charge Pumps); 1.6 Switched Mode DC/DC Converters; 1.7 Comparison between Linear Regulators, Charge Pumps, and SwitchedRegulators; 1.8 Topologies for Nonisolated DC/DC Switched Converters; 1.9 Topologies for Isolated Switching Converters; 1.10 SPICE Circuit Simulation; 1.11 Power Management Systems for Battery-Powered Devices., 1.12 SummaryChapter 2 Power Converters and Power Management ICs; 2.1 Dynamic Voltage Scaling for VLSI Power Management; 2.2 Integrated DC/DC Converters; 2.3 Summary; Chapter 3 Semiconductor Industry and More than Moore; 3.1 Semiconductor Industry; 3.2 History of the Semiconductor Industry; 3.3 Food Chain Pyramid of the Semiconductor Industry; 3.4 Semiconductor Companies; 3.5 More than Moore; Chapter 4 Smart Power IC Technology; 4.1 Smart Power IC Technology Basics; 4.2 Smart Power IC Technology: Historical Perspective; 4.3 Smart Power IC Technology: Industrial Perspective., 4.4 Smart Power IC Technology: Technological PerspectiveChapter 5 Introduction to TCAD Process Simulation; 5.1 Overview; 5.2 Mesh Setup and Initialization; 5.3 Ion Implantation; 5.4 Deposition; 5.5 Oxidation; 5.6 Etching; 5.7 Diffusion; 5.8 Segregation; 5.9 Process Simulator Models Calibration; 5.10 Introduction to 3D TCAD Process Simulation; 5.11 GPU Simulation; Chapter 6 Introduction to TCAD Device Simulation; 6.1 Overview; 6.2 Basics about Device Simulation; 6.3 Physical Models; 6.4 AC Analysis; 6.5 Trap Model in TCAD Simulation; 6.6 Quantum Tunneling., 6.7 Device Simulator Models CalibrationChapter 7 Power IC Process Flow with TCAD Simulation; 7.1 Overview; 7.2 A Mock-Up Power IC Process Flow; 7.3 Smart Power IC Process Flow Simulation; Chapter 8 Integrated Power Semiconductor Devices with TCAD Simulation; 8.1 PN Junction Diodes; 8.2 Bipolar Junction Transistors; 8.3 LDMOS; Chapter 9 Integrated Power Semiconductor Devices with 3D TCAD Simulations; 9.1 3D Device Layout Effect; 9.2 3D Simulation of LIGBT; 9.3 Super Junction LDMOS; 9.4 Super Junction Power FinFET; 9.5 Large Interconnect Simulation; Chapter 10 GaN Devices, an Introduction., and 10.1 Compound Materials versus Silicon10.2 Substrate Materials for GaN Devices; 10.3 Polarization Properties of III-Nitride Wurtzite; 10.4 AlGaN/GaN Heterojunction; 10.5 Traps in AlGaN/GaN Structure; 10.6 A Simple AlGaN/GaN HEMT; 10.7 GaN Power HEMT Example I; 10.8 GaN Power HEMT Example II; 10.9 Gate Leakage Simulation of GaN HEMT; 10.10 Market Prospect of Compound Semiconductors for Power Applications; Appendix A: Carrier Statistics; Appendix B: Process Simulation Source Code; Appendix C: Trap Dynamics and AC Analysis; Bibliography.
- "From power electronics to power integrated circuits (PICs), smart power technologies, devices, and beyond, Integrated Power Devices and TCAD Simulation provides a complete picture of the power management and semiconductor industry. An essential reference for power device engineering students and professionals, the book not only describes the physics inside integrated power semiconductor devices such lateral double-diffused metal oxide semiconductor field-effect transistors (LDMOSFETs), lateral insulated-gate bipolar transistors (LIGBTs), and super junction LDMOSFETs but also delivers a simple introduction to power management systems. Instead of abstract theoretical treatments and daunting equations, the text uses technology computer-aided design (TCAD) simulation examples to explain the design of integrated power semiconductor devices. It also explores next generation power devices such as gallium nitride power high electron mobility transistors (GaN power HEMTs). Including a virtual process flow for smart PIC technology as well as a hard-to-find technology development organization chart, Integrated Power Devices and TCAD Simulation gives students and junior engineers a head start in the field of power semiconductor devices while helping to fill the gap between power device engineering and power management systems."--
- 9781466583832 (eBook)
- Bibliography Note:
- Includes bibliographical references and index.
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