Infrared baking of positive photoresist for hybrid microcircuit fabrication

Author:: Schantz, L. E.
Published:: United States : [publisher not identified], 1976
[Oak Ridge, Tennessee] : [U.S. Atomic Energy Commission], 1976
Physical Description:: microfiche : negative ; 11 x 15 cm

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Summary:

The use of infrared heating to bake Shipley AZ1350 positive photoresist before exposure was investigated as an integral part of a cost-effective hybrid microcircuit photolithographic procedure. The baking parameters which affected the substrate temperature were emitter temperature, conveyor speed, emissivity of the substrate surface, and the amount of air forced through the oven chamber. Individual settings on the emitter temperature and conveyor speed controllers were stable and repeatable; however, the substrate emissivity was dependent upon the thin-film composition and photoresist thickness. When the volume of air forced through the oven remained stable, so did its effect on the substrate temperature. Through manipulation and control of these parameters, consistent prebaking of photoresist-coated substrates was achieved.

Report Numbers:

BDX-613-1246

Other Subject(s):

Collection:

U.S. Atomic Energy Commission depository collection.

Note:

DOE contract number: E(29-1)-613
OSTI Identifier 7176119
Research organization: Bendix Corp., Kansas City, MO (United States).

View MARC record | catkey: 39977614