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Surface effects on semiconductors. Final report

Author
Rauch, E. L.
Published
United States : [publisher not identified], 1976.
[Oak Ridge, Tennessee] : [U.S. Atomic Energy Commission], 1976.
Physical Description
microfiche : negative ; 11 x 15 cm

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Summary
Semiconductor bi-polar and field-effect transistors were contaminated with sodium ions, subjected to high temperature reverse bias, measured electrically, and examined internally to study the effects of inversion, depletion, and accumulation in crystalline silicon. This study was terminated because of the inability to induce electrical degradation through surface contamination at a level consistently high enough to permit statistically valid correlations and conclusions. (auth)
Report Numbers
BDX-613-1468
Other Subject(s)
Collection
U.S. Atomic Energy Commission depository collection.
Note
DOE contract number: AT(29-1)-613
OSTI Identifier 7204423
Research organization: Bendix Corp., Kansas City, MO (United States).
View MARC record | catkey: 39977680