Actions for EFFECT OF GAS PRESSURE ABOUT ATMOSPHERIC ON RATE OF ETCHING AND SURFACE ROUGHNESS OF CATHODICALLY ETCHED METAL SURFACES

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EFFECT OF GAS PRESSURE ABOUT ATMOSPHERIC ON RATE OF ETCHING AND SURFACE ROUGHNESS OF CATHODICALLY ETCHED METAL SURFACES

Author
Correy, T. B.
Published
United States : [publisher not identified], 1962.
[Oak Ridge, Tennessee] : [U.S. Atomic Energy Commission], 1962.
Physical Description
microopaque : positive ; 8 x 13 cm

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Summary
It was found that a finite pressure of argon gas will pro duce minimal surface roughness when cathodically etchin aluminum, copper, uranium, and Zircaloy-2 in an argon a mosphere at pressures from atmospheric to 29.8 inches (755 mm) of mercury below atmospheric. A very thin film followed by a thicker one can be selectively etched from some metals. Etching spots on the same metals disclosed that for a constant current they did not all reach the same or a limiting diameter of spot in the same time. A superimposed radiofrequency current is used to maintain the discharge. Cathodically etching in the transfer region between streamer discharge and gaseous discharge and in the gaseous discharge region were totally unsatisfactory. Indications are that helium can be used, but the etching rate is much lower for the same current and requires higher open, circuit potential for some metals. (auth)
Report Numbers
HW-SA-2559
Other Subject(s)
Collection
U.S. Atomic Energy Commission depository collection.
Note
DOE contract number: AT(45-1)-1350
NSA number: NSA-17-011089
OSTI Identifier 4713242
Research organization: General Electric Co. Hanford Atomic Products Operation, Richland, Wash.
View MARC record | catkey: 40790003