A method was developed whereby a B/sub 4/C-SiC specimen can be quantitatively analyzed. The x-ray analytical technique, which depends on the ratio of the intensities of the B/sub 4/C peak at 2 THETA = 23.5 deg and the SiC peak at 2 THETA = 60 deg , has a precision of plus or minus 3%. The peak intensities were obtained via a Picker x-ray diffractometer. Another completely independent result of this investigation is that the presence of SiC has no effect on the x-ray method of determining the stoichiometry of boron carbide. (auth)
U.S. Atomic Energy Commission depository collection.
Note
DOE contract number: W-31-109-ENG-52 NSA number: NSA-17-001383 OSTI Identifier 4787994 Research organization: Knolls Atomic Power Lab., Schenectady, N.Y.