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INFRARED MODULATION BY FREE CARRIER ABSORPTION

Author
McQuistan, R. B.
Published
United States : [publisher not identified], 1963.
[Oak Ridge, Tennessee] : [U.S. Atomic Energy Commission], 1963.
Physical Description
microfiche : negative ; 8 x 13 cm
Additional Creators
Schultz, J. W.

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Summary
BS>At wavelengths beyond the fundamental absorption edge the transmittance of semiconducting materials may be altered by the injection of free minority carriers. Utilizing this phenomenon to modulate infrared radiation is diacussed. Experimental results relating to the electrooptical characteristics of free carrier modulators are presented and compared with theory. (auth)
Report Numbers
SCR-636; CONF-26-4
Other Subject(s)
Collection
U.S. Atomic Energy Commission depository collection.
Note
DOE contract number: AT(29-1)-789
NSA number: NSA-17-032729
OSTI Identifier 4689986
Research organization: Honeywell Research Center, Hopkins, Minn.
Funding Information
Sponsored by US Atomic Energy Commission (AEC).
View MARC record | catkey: 42246339