PHONON SCATTERING AND INDUCED-ENERGY LEVELS IN ELECTRON-IRRADIATED Sb-DOPED Ge IN THE n to p-TYPE CONVERSION REGION

Author: Laurence, G.
Published: France : [publisher not identified], 1971.
[Oak Ridge, Tennessee] : [U.S. Atomic Energy Commission], 1971.
Physical Description: microfiche : negative ; 11 x 15 cm
Additional Creators: Albany, H. J.

Availability

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Report Numbers

CEA-CONF-1745; CONF-700824-2

Other Subject(s)

Antimony
Doped materials
Electrons
Electrons/effects on thermal conductivity of antimony-doped germanium at 4 mev
Energy levels
Germanium
Germanium/radiation effects on low-temperature thermal conductivity of antimony-doped, 4-mev electron
Hall effect
Low temperature
Mev range 01-10.
N-type conductors
N33110 -physics (solid state)-radiation effects
P-type conductors
Phonons
Radiation doses
Radiation effects
Scattering
Temperature
Thermal conductivity

Collection

U.S. Atomic Energy Commission depository collection.

Note

NSA number: NSA-25-033403
OSTI Identifier 4047675
Research organization: Commissariat a l'Energie Atomique, Saclay (France). Centre d'Etudes Nucleaires.

View MARC record | catkey: 42545350

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PHONON SCATTERING AND INDUCED-ENERGY LEVELS IN ELECTRON-IRRADIATED Sb-DOPED Ge IN THE n to p-TYPE CONVERSION REGION

Availability