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ISTFA 2013 : conference proceedings from the 39th International Symposium for Testing and Failure Analysis, November 3-7, 2013, San Jose Convention Center, San Jose, California, USA / sponsored by Electronic Device Failure Analysis Society

Conference Author
International Symposium for Testing and Failure Analysis (39th : 2013 : San Jose, Calif.)
Published
Materials Park, Ohio : ASM International, 2013.
Copyright Date
©2013
Physical Description
1 online resource (633 pages) : color illustrations, charts, photographs, graphs, tables
Additional Creators
Electronic Device Failure Analysis Society
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Language Note
English.
Contents
Title Page -- Copyright -- Board of Directors -- Organizing Committee -- Symposium Committee -- User Groups -- Contents -- 2013 IPFA Best Paper -- Non-Destructive Open Fault Isolation in Flip-Chip Devices with Space-Domain Reflectometry -- 3D Packages -- 3D Void Imaging in Through Silicon Vias by X-ray Nanotomography in a SEM -- Challenges for Physical Failure Analysis of 3D-Integrated Devices -- Sample Preparation and Analysis to Support Process Development of TSVs -- Sample Preparation Strategies for Fast and Effective Failure Analysis of 3D Devices, Fast and Precise 3D Tomography of TSV by Using Xe Plasma FIBCase Studies and the Failure Analysis Process -- 22 nm BEOL TDDB Defect Localization and Root Cause Analysis -- Open Failure Diagnosis Candidate Selection Based on Passive Voltage Contrast Potential and Processing Cost -- Effective Defect Localization on Nanoscale Short Failures -- Defect Isolation Tools Accelerate the Failure Analysis Process -- First in Operando SEM Observation of Electromigration-Induced Voids in TSV Structures, The Application of Magnetic Force Microscopy for Detection of Subsurface Anomalies in Semiconductor Device Wiring LevelsComputed Tomography as Failure Analysis Insurance -- Challenges of Small Defect Analysis in Large Analog Power FET Arrays -- Conversion of a D-Mode FET to an E-Mode FET via Electrostatic Discharge in a GaAs Power Amplifier Duplexer Module -- Marginal RF Gain Investigation and Root Cause Determination -- Anamnesis in Failure Analysis -- How a System-Related Approach Can Save Failure Analysis (FA) Time, Shorten Learning Loops and Reduce Cost, Failure Analysis for SRAM Logic Type FailuresCircuit Edit -- Circuit Edit Geometric Trends -- Implications of Helium and Neon Ion Beam Chemistry for Advanced Circuit Editing -- Silicon and Package Preparation Options for Focused Ion Beam (FIB) Circuit Editing and General Packaging Failure Analysis -- Defect Characterization and Metrology -- Simulation Studies on Fluorine Spec Limit for Process Monitoring of Microchip Al Bondpads in Wafer Fabrication -- Surface Microstructure Evolution Upon Silicidation of Ni(Pt) and the Different Responses to Metal Etch, and Gate Leakage Characterization and Fail Mode Analysis on 20 nm Technology Parametric Test StructuresSTEM EDX Mappings and Tomography for Process Characterization and Physical Failure Analysis of Advanced Devices -- Automatic Registering and Stitching of TEM/STEM Image Mosaics -- AFM-Based Chemical and Mechanical Property Characterization of Interconnects and Defects -- Evaluation of Digital Holography Microscopy for Roughness Control Prior Wafer Direct Bonding -- Emerging Concepts and Techniques -- Pump-Probe Imaging of Integrated Circuits
Subject(s)
Genre(s)
ISBN
9781627080231 (electronic bk.)
1627080236 (electronic bk.)
9781680155136 (electronic bk.)
168015513X (electronic bk.)
9781627080224
Bibliography Note
Includes bibliographical references at the end of each chapters and index.
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