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Analog devices and circuits. 1, Analog devices / Christian Gontrand

Author
Gontrand, Christian
Additional Titles
Analog devices
Published
[Place of publication not identified] : JOHN WILEY, 2024.
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1 online resource
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Contents
Cover -- Title Page -- Copyright Page -- Contents -- Preface -- Introduction -- Chapter 1. Bipolar Junction Transistor -- 1.1. Introduction -- 1.1.1. A schematic technological embodiment of an integrated bipolar junction transistor -- 1.2. Transistor effect -- 1.2.1. Flows and currents -- 1.2.2. Compromises for bipolar junction transistor -- 1.2.3. Configurations and associated current gains -- 1.3. Bipolar junction transistor: some calculations -- 1.3.1. Various modes of operation -- 1.4. The NPN transistor -- Ebers-Moll model (1954: Jewell James Ebers and John L. Moll), 1.4.1. Gummel curves -- 1.4.2. Consideration of second-order effects for the static model -- 1.4.3. Early curves -- 1.4.4. Base width modulation -- Early effect -- 1.4.5. Ebers-Moll model wide signals -- 1.4.6. Current gain -- 1.5. Simple bipolar junction transistor model -- 1.6. Network of static characteristics of the bipolar junction transistor -- 1.6.1. Common emitter configuration -- 1.6.2. Common emitter configuration with emitter degeneration -- 1.7. Some applications -- 1.7.1. Current mirrors -- 1.7.2. Differential pair -- 1.7.3. Output stage -- 1.8. Application: operational amplifier, 1.9. BiCMOS -- Chapter 2. MOSFET -- 2.1. Introduction -- 2.1.1. Base structure -- 2.1.2. Working principle -- 2.2. MOS capability: electric model and curve C(V) -- 2.3. Different types of MOS transistors -- 2.4. A CMOS technological process -- 2.5. Electric modeling of the NMOS enhancement transistor -- 2.6. Off state -- 2.7. Linear or ohmic or unsaturated regime -- 2.7.1. Saturation regime -- 2.7.2. High saturation velocity -- 2.7.3. Static characteristics -- 2.8. Applications -- 2.8.1. Digital inverter -- 2.8.2. Active resistor -- 2.8.3. MOS Single current mirror, and Preface ix -- Introduction xiii -- Chapter 1 Bipolar Junction Transistor 1 -- 1.1 Introduction 1 -- 1.1.1 A schematic technological embodiment of an integrated bipolar junction transistor 2 -- 1.2 Transistor effect 4 -- 1.2.1 Flows and currents 5 -- 1.2.2 Compromises for bipolar junction transistor 6 -- 1.2.3 Configurations and associated current gains 7 -- 1.3 Bipolar junction transistor: some calculations 9 -- 1.3.1 Various modes of operation 15 -- 1.4 The NPN transistor; Ebers-Moll model (1954: Jewell James Ebers and John L Moll) 16 -- 1.4.1 Gummel curves 18 -- 1.4.2 Consideration of second-order effects for the static model 19 -- 1.4.3 Early curves 20 -- 1.4.4 Base width modulation; Early effect 20 -- 1.4.5 Ebers-Moll model wide signals 22 -- 1.4.6 Current gain 26 -- 1.5 Simple bipolar junction transistor model 27 -- 1.6 Network of static characteristics of the bipolar junction transistor 27 -- 1.6.1 Common emitter configuration 31 -- 1.6.2 Common emitter configuration with emitter degeneration 34 -- 1.7 Some applications 35 -- 1.7.1 Current mirrors 35 -- 1.7.2 Differential pair 38 -- 1.7.3 Output stage 41 -- 1.8 Application: operational amplifier 43 -- 1.9 BiCMOS 43 -- Chapter 2 MOSFET 45 -- 2.1 Introduction 45 -- 2.1.1 Base structure 45 -- 2.1.2 Working principle 46 -- 2.2 MOS capability: electric model and curve C(V) 47 -- 2.3 Different types of MOS transistors 49 -- 2.4 A CMOS technological process 50 -- 2.5 Electric modeling of the NMOS enhancement transistor 52 -- 2.6 Off state 52 -- 2.7 Linear or ohmic or unsaturated regime 52 -- 2.7.1 Saturation regime 53 -- 2.7.2 High saturation velocity 53 -- 2.7.3 Static characteristics 54 -- 2.8 Applications 56 -- 2.8.1 Digital inverter 56 -- 2.8.2 Active resistor 58 -- 2.8.3 MOS Single current mirror 59 -- 2.8.4 MOS differential amplifier 60 -- 2.9 Explained technological steps of a CMOS 60 -- Chapter 3 Devices Dedicated to Radio Frequency: Toward Nanoelectronics 75 -- 3.1 Introduction 75 -- 3.2 Model for HBT SiGeC and device structure 76 -- 3.2.1 Modeling the drift-diffusion equation 76 -- 3.3 MOS of the future? 83 -- 3.3.1 Introduction 83 -- 3.3.2 DGMOS 84 -- 3.3.3 Transport in nanoscale MOSFETs 85 -- 3.3.4 Numerical methods 87 -- 3.4 Conclusion 111 -- 3.5 MATLAB use 112 -- 3.5.1 Computer-aided modelling and simulations: synopsis 112 -- 3.5.2 Calculation of the second elementary member ρ1 139 -- 3.6 Conclusion 185 -- Appendix 187 -- References 211 -- Index 213.
Summary
At the end of the Second World War, a new technological trend was born: integrated electronics. This trend relied on the enormous rise of integrable electronic devices. Analog Devices and Circuits is composed of two volumes: the first deals with analog components, and the second with associated analog circuits. The goal here is not to create an overly comprehensive analysis, but rather to break it down into smaller sections, thus highlighting the complexity and breadth of the field. This first volume, after a brief history, describes the two main devices, namely bipolar transistors and MOS, with particular importance given to the modeling aspect. In doing so, we deal with new devices dedicated to radio frequency, which touches on nanoelectronics. We will also address some of the notions related to quantum mechanics. Finally, Monte Carlo methods, by essence statistics, will be introduced, which have become more and more important since the middle of the twentieth century. The second volume deals with the circuits that "use" the analog components that were introduced in Volume 1. Here, a particular emphasis is placed on the main circuit: the operational amplifier.
Subject(s)
ISBN
9781394255450 (electronic bk.)
1394255454 (electronic bk.)
9781394255467 (electronic bk.)
1394255462 (electronic bk.)
9781394255474 (electronic bk.)
1394255470 (electronic bk.)
1786308991
9781786308993
Bibliography Note
References -- Index -- EULA
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