ADVANCED HIGH TC FERROELECTRICS; Library of Congress Cataloging-in-Publication Data; CONTENTS; PREFACE; Chapter 1: INTRODUCTION: FUNDAMENTALS FOR FERROELECTRICS; 1.1. AN EARLY DEVELOPMENT HISTORY OF FERROELECTRIC MATERIALS; 1.2. BASIC KNOWLEDGE OF FERROELECTRICITY; 1.3. DIELECTRIC BEHAVIORS; 1.4. PIEZOELECTRIC BEHAVIORS; 1.5. PYROELECTRICITY EFFECT; 1.6. FERROELECTRIC PHOTOVOLTAICS; REFERENCES; Chapter 2: RELAXOR FERROELECTRICS AND FUNDAMENTALS FOR HIGH TC FERROELECTRICS; 2.1. RELAXOR FERROELECTRICS; CONCLUSION; 2.2. HIGH CURIE TEMPERATURE FERROELECTRICS: SIMPLE OVERVIEW., 2.3. CURRENT STATE-OF-THE-ARTREFERENCES; Chapter 3: SIMPLE INTRODUCTION FOR HIGH-TC FERROELECTRIC CERAMICS; THE DEVELOPMENT OF BIMEO3-PBTIO3; THE DEVELOPMENT OF BISCO3-PBTIO3; CONCLUSION; REFERENCES; Chapter 4: HIGH-TC FERROELECTRIC SINGLE CRYSTALS; 4.1. THE DEVELOPMENT OF TYPICAL HIGH CURIE TEMPERATURE PB(B1B2)O3-PBTIO3 FERROELECTRIC CRYSTAL; 4.2. THE DEVELOPMENT OF BISCO3-PBTIO3 SINGLE CRYSTAL; REFERENCES; Chapter 5: HIGH-TC FERROELECTRIC THIN FILMS; 5.1. FERROELECTRIC THIN FILMS BY PULSED LASER DEPOSITION AND SOL-GEL TECHNIQUES: PROCESSING AND CHARACTERIZATION., and 5.2. DEVELOPMENT OF PYN-PT FILMS5.3. DEVELOPMENT OF BSPT THIN FILMS; REFERENCES; Chapter 6: TEXTURE ENGINEERED BSPT THIN FILMS; 6.1. DEVELOPMENT OF MPB BISCO3-PBTIO3 FILMS; 6.3. MPB 0.37BISCO3-0.63PBTIO3 FILMS DEPOSITED ON IRIDIUM OXIDE ELECTRODES; 6.4. LNO ELECTRODED 0.37BISCO3-0.63PBTIO3 FERROELECTRIC THIN FILMS; 6.5. PIEZOELECTRIC FORCE MICROSCOPY STUDY OF DOMAIN STRUCTURE IN HIGH TC FERROELECTRIC FILMS; 6.6. TEXTURE CONTROL OF BSPT THIN FILMS; REFERENCES; INDEX.
Summary
Micro-Electro-Mechanical Systems (MEMS) is the integration of mechanical elements, sensors, actuators, and electronics on a common silicon substrate through microfabrication technology. Electromechanical actuators directly transform input electrical energy into mechanical energy. Piezoelectric and electrostrictive ceramics are widely used in applications requiring high generative force, high frequency operation, accurate displacement, quick response time, or small device size. This book presents important progress in growth and structure-property studies in ferroelectrics with a high Curie tem.
