Actions for Dip coating process. Quarterly report No. 3, March 19, 1976--June 18, 1976

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Dip coating process. Quarterly report No. 3, March 19, 1976--June 18, 1976

Author
Heaps, J. D.
Published
United States : [publisher not identified], 1976.
[Oak Ridge, Tennessee] : [U.S. Atomic Energy Commission], 1976.
Physical Description
microfiche : negative ; 11 x 15 cm
Additional Creators
Maciolek, R. B., Nelson, L. D., Scott, M. W., and Wolner, H. A.

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Summary
The objective of this research program is to investigate the technical and economic feasibility of producing solar-cell quality sheet silicon by dip-coating one surface of carbonized ceramic substrates with a thin layer of large-grain polycrystalline silicon. Of the various substrate materials dip-coated this reporting period, mullite appears, at this time, to best satisfy the requirements of this research program. Dip-coating experiments continue to demonstrate that layer thickness and grain size are dependent on and can be controlled by pulling rate and melt temperature. Crystalline grains as large as 1 mm wide and 2 cm or more long can consistently be grown in layers 35 to 50 ..mu.. meters thick. (WDM)
Report Numbers
ERDA/JPL/954356-76/2
Other Subject(s)
Collection
U.S. Atomic Energy Commission depository collection.
Note
DOE contract number: NAS 7-100-954356
OSTI Identifier 7157990
Research organization: Honeywell Corporate Research Center, Bloomington, Minn. (USA).
View MARC record | catkey: 44799607