Actions for Chemical vapor deposition growth. Quarterly report No. 2.

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Chemical vapor deposition growth. Quarterly report No. 2.

Author
Ruth, R. P.
Published
United States : [publisher not identified], 1976.
[Oak Ridge, Tennessee] : [U.S. Atomic Energy Commission], 1976.
Physical Description
microfiche : negative ; 11 x 15 cm
Additional Creators
Kenty, J. L., Manasevit, H. M., Mondy, L. A., Simpson, W. I., and Yang, J. J.

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Summary
The objective of the program is the development of CVD techniques for producing large areas of Si sheet on inexpensive substrate materials, with sheet properties suitable for fabricating solar cells meeting the technical goals of the Low Cost Silicon Solar Array Project (LCSSAP). The techniques developed are to be directed toward (1) minimum-cost processing, (2) production of sheet having properties adequate to result in cells with terrestrial array efficiency of 10 percent or more, and (3) eventual scale-up to large-quantity production. (WDM)
Report Numbers
ERDA/JPL/954372-76/2
Other Subject(s)
Collection
U.S. Atomic Energy Commission depository collection.
Note
DOE contract number: NAS(7-100)-954372
OSTI Identifier 7264515
Research organization: Rockwell International Corp., Anaheim, Calif. (USA). Electronics Research Div.
View MARC record | catkey: 44799616