Nanoscaled semiconductor-on-insulator structures and devices [electronic resource] / edited by S. Hall, A.N. Nazarov, V.S. Lysenko
- Conference Author
- NATO Advanced Research Workshop on Nanoscaled Semiconductor-on-Insulator Structures and Devices (2006 : Sudak, Ukraine)
- Published
- Dordrecht : Springer, [2007]
- Copyright Date
- ©2007
- Physical Description
- 1 online resource (xiii, 369 pages) : illustrations
- Additional Creators
- Hall, Steve, Ph. D., Nazarov, A. N. (Alexei N.), and Lysenko, V. S. (Vladimir S.)
Access Online
- SpringerLink: ezaccess.libraries.psu.edu
- Series
- Contents
- Machine generated contents note: Status and trends in SOI nanodevices / F. Balestra -- Non-planar devices for nanoscale CMOS / M. C. Lemme / H. D. B. Gottlob / H. Kurz -- High-k dielectric stacks for nanoscaled SOI devices / S. Hall / O. Buiu / I. Z. Mitrovic / Y. Lu / W. M. Davey -- Nanoscaled semiconductor heterostructures for CMOS transistors formed by ion implantation and hydrogen transfer / V. Popov / I. Tyschenko / A. Cherkov / M. Voelskow -- Fluorine-vacancy engineering : a viable solution for dopant diffusion suppression in SOI substrates / H. A. W. El Mubarek / P. Ashburn -- Suspended silicon-on-insulator nanowires for the fabrication of quadruple gate MOSFETs / V. Passi / B. Olbrechts / J.-P. Raskin / J. Bolten / T. Mollenhauer / T. Wahlbrink / M. C. Lemme / H. Kurz -- Integration of silicon single-electron transistors operating at room temperature / T. Hiramoto -- SiGe nanodots in electro-optical SOI devices / A. V. Dvurechenskii / A. I. Yakimov / N. P. Stepina / V. V. Kirienko / P. L. Novikov -- Nanowire quantum effects in trigate SOI MOSFETs / J.-P. Colinge -- Semiconductor nanostructures and devices / J. Knock / H. Luth -- MuGFET CMOS process with midgap gate material / W. Xiong / C. R. Cleavelin / T. Schulz / K. Schrufer / P. Patruno / J.-P. Colinge -- Doping fluctuation effects in multiple-gate SOI MOSFETs / C. A. Colinge / W. Xiong / C. R. Cleavelin / J.-P. Colinge -- SiGeC HBTs : impact of C on device performance / I. Z. Mitrovic / H. A. W. El Mubarek / O. Buiu / S. Hall / P. Ashburn / J. Zhang -- Noise research of nanoscaled SOI devices / N. Lukyanchikova -- Electrical characterization and special properties of FINFET structures / T. Rudenko / V. Kilchytska / N. Collaert / A. Nazarov / M. Jurczak / D. Flandre -- Substrate effect on the output conductance frequency response of SOI MOSFETs / V. Kilchytska / D. Levacq / D. Lederer / G. Pailloncy / J.-P. Raskin / D. Flandre -- Investigation of compressive strain effects induced by STI and ESL / S. Zaouia / S. Cristoloveanu / A. H. Perera -- Charge trapping phenomena in single electron NVM SOI devices fabricated by a self-aligned quantum dot technology / A. Nazarov / V. Lysenko / X. Tang / N. Reckinger / V. Bayot -- Variability in nanoscale UTB SOI devices and its impact on circuits and systems / A. Asenov / K. Samsudin -- Electron transport in silicon-on-insulator nanodevices / F. Gamiz / A. Godoy / C. Sampedro -- All quantum simulation of ultrathin SOI MOSFETs / A. Orlikovsky / V. Vyurkov / V. Lukichev / I. Semenikhin / A. Khomyakov -- Resonant tunneling devices on SOI basis / B. Majkusiak -- Mobility modeling in SOI FETs for different substrate orientations and strain conditions / V. Sverdlov / E. Ungersboeck / H. Kosina.
- Subject(s)
- ISBN
- 9781402063800
1402063806 - Note
- AVAILABLE ONLINE TO AUTHORIZED PSU USERS.
- Bibliography Note
- Includes bibliographical references and author index.
- Reproduction Note
- Electronic reproduction. Berlin : Springer, 2007. Mode of access: World Wide Web. Available via SpringerLink.
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