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Actions for EVOLUTION OF THE CARRIER LIFETIME IN JUNCTION DIODES IRRADIATED BY HIGH- ENERGY PROTONS
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EVOLUTION OF THE CARRIER LIFETIME IN JUNCTION DIODES IRRADIATED BY HIGH- ENERGY PROTONS
Author
Bielle, J.
Published
[Place of publication not identified] : [publisher not identified], 1970.
[Oak Ridge, Tennessee] : [U.S. Atomic Energy Commission], 1970.
Physical Description
microfiche : negative ; 11 x 15 cm
Full Text available online
Availability
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Report Numbers
NP-18472
Other Subject(s)
Carrier lifetime
Defects
Diodes
Diodes/radiation effects on carrier lifetime in junction, very-high-energy proton
Electrons/effects on carrier lifetime in junction diodes and solar cells at 4.5 mev
Gev range 01-10- proton beams
Junctions
Mev range 01-10.
N26500 - -instrumentation-radiation effects on instruments & instrument components
N33110 -physics (solid state)-radiation effects
Protons/effects on carrier lifetime in junction diodes and solar cells at energies up to 3,000 mev
Radiation effects
Semiconductor junctions/radiation effects on carrier lifetime in diodes, very-high-energy proton
Semiconductors
Solar cells electron beams
Solar cells/radiation effects on carrier lifetime in, very-high-energy proton
Collection
U.S. Atomic Energy Commission depository collection.
Note
NSA number: NSA-25-001261
OSTI Identifier 4105564
Research organization: Toulouse Univ. (France). Faculte des Sciences.
View MARC record
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