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Thin epitaxial silicon for dE/dx detectors

Author
Maggiore, C. J.
Published
United States : [publisher not identified], 1976.
[Oak Ridge, Tennessee] : [U.S. Atomic Energy Commission], 1976.
Physical Description
microfiche : negative ; 11 x 15 cm
Additional Creators
DeHaven, H. V., Goldstone, P. D., Gruhn, C. R., Jarmie, N., and Stotlar, S. C.

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Summary
The techniques for fabricating thin self-supporting epitaxial films for dE/dx detectors have been studied. Detectors having thicknesses between 1 and 4 ..mu..m with areas of 12.5 mm/sup 2/ have been fabricated and tested. The response of the detectors has been studied with alpha particles, oxygen ions, and fission framents.
Report Numbers
LA-UR-76-2291; CONF-761006-12
Other Subject(s)
Collection
U.S. Atomic Energy Commission depository collection.
Note
DOE contract number: W-7405-ENG-36
OSTI Identifier 7142200
Research organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States).
View MARC record | catkey: 46147142