Avalanche devices state-of-the-art

Author: Pocha, M. D.
Published: United States : [publisher not identified], 1983
Springfield, Va.: National Technical Information Service, [approximately 1983]
Physical Description: microfiche : negative ; 11 x 15 cm

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Summary

Some uses and characteristics of avalanche transistors are briefly listed, and some observations derived from studying avalanche transistors are given, as well as plans for future work. It is found that surface topology does not seem to affect the rise time, that increasing area of the diffusions does not affect the current handling capability, that the breakdown voltage divided by the rise time is almost constant, and that series connection of transistors does not degrade rise time. (LEW)

Report Numbers

DE83014841; UCRL-88536; CONF-830145-1

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Collection

NTIS collection.

Note

DOE contract number: W-7405-ENG-48
OSTI Identifier 5966327
Research organization: Lawrence Livermore National Lab., CA (USA).

View MARC record | catkey: 47332256

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Avalanche devices state-of-the-art

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