Actions for CO2 laser heating of silicon and applications

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CO2 laser heating of silicon and applications

Author
Kwok, H. S.
Published
United States : [publisher not identified], 1983
Springfield, Va.: National Technical Information Service, [approximately 1983]
Physical Description
microfiche : negative ; 11 x 15 cm

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Summary
Pulsed CO2 laser interaction with doped silicon can produce significant heating of the semiconductor. This heating is studied and two major applications are explored. Fast CO2 laser detection due to the rapid thermal generation of carriers is demonstrated.
Report Numbers
DE84008273; DOE/ER/10978-4; CONF-830425-37
Other Subject(s)
Collection
NTIS collection.
Note
DOE contract number: AC02-81ER10978
OSTI Identifier 5256040
Research organization: State Univ. of New York, Buffalo (USA). Dept. of Electrical and Computer Engineering.
View MARC record | catkey: 47339770